Gallium nitride materials and devices III (21-24 January 2008, San Jose, California, USA)Morkoç, Hadis.Proceedings of SPIE, the International Society for Optical Engineering. 2008, issn 0277-786X, isbn 978-0-8194-7069-0, 1Vol, various pagings, isbn 978-0-8194-7069-0Conference Proceedings

1/f Noise in Nitride-Based Spintronic DevicesHANDEL, Peter H; TRUONG, Amanda M.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68914G.1-68914G.7, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

AlGaN/SiC heteroj unction bipolar transistorALIVOV, Ya. I; FAN, Q; NI, X et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941W.1-68941W.5, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

III-Nitride Based Deep Ultraviolet Light SourcesSHUR, M. S; GASKA, R.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689419.1-689419.8, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETsQIAN FAN; LEACH, Jacob H; MO WU et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689426.1-689426.8, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Millimeter-wave GaN HFET technologyHIGASHIWAKI, Masataka; MIMURA, Takashi; MATSUI, Toshiaki et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941L.1-68941L.9, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

RGB LED with smart control in the backlight & lightingKU, Johnson C. S; LEE, C. J.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940W.1-68940W.8, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Recent Status of White LEDs and Nitride LDsMIYOSHI, Takashi; YANAMOTO, Tomoya; KOZAKI, Tokuya et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689414.1-689414.7, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Development of UV-photocathodes using GaN film on Si substrateFUKE, S; SUMIYA, M; NIHASHI, T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941F.1-68941F.7, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

High temperature performance measurement and analysis of GaN HEMTsPOLASH, B. A; HUQUE, M. A; ISLAM, S. K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941J.1-68941J.9, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Nanopatterning and selective area epitaxy of GaN on Si substrateWANG, L. S; CHUA, S. J; TRIPATHY, S et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940A.1-68940A.6, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Al_xIn_1-xN/GaN Heterostructure Field Effect TransistorsXIE, J; NI, X; WU, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941R.1-68941R.6, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Photoluminescence study of near-surface GaN/AIN superlatticesPASKOV, P. P; MONEMAR, B; PASKOVA, T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940G.1-68940G.8, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Progress in GaN Devices Performances and ReliabilitySAUNIER, P; LEE, C; SOUZIS, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941I.1-68941I.10, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

True blue InGaN laser for pico size projectorsSTRAUSS, U; BRUNINGHOFF, S; DINI, D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689417.1-689417.8, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Status of GaN HEMT performance and reliabilityGREEN, Daniel S; BROWN, J. D; VETURY, R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941M.1-68941M.8, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

The role of anisotropy for the defect properties in a-plane GaNKROGER, R; PASKOVA, T.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689403.1-689403.5, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Comparative study of electroluminescence efficiency of blue (In,Ga)N and red GaAs quantum well diodesINADA, T; JIMI, H; FUJIWARA, K et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941T.1-68941T.10, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Dynamics of intervalley transitions and propagation of coherent acoustic phonons in GaN single crystals studied by femtosecond pump-probe spectroscopySHUAI WU; JIE ZHANG; BELOUSOV, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940K.1-68940K.13, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopyKANEKO, M; HINOKI, A; SUZUKI, A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689418.1-689418.9, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphireNI, X; SHIMADA, R; LEACH, J. H et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 689428.1-689428.6, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Piezoelectric Quantum 1/f Noise in Nitride-Based HeterostructuresHANDEL, Peter H; MORKOC, Hadis; SIA, Engkee et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68941N.1-68941N.14, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increaseKOMOROWSKA, K; WISNIEWSKI, P; MARONA, L et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940Q.1-68940Q.7, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

AIN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength rangeHOFSTETTER, Daniel; BAUMANN, Esther; GIORGETTA, Fabrizio R et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940S.1-68940S.10, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper

Band coupling model of electron and hole mediated ferromagnetism in Semiconductors : The case of GaNWEI, Su-Huai; DALPIAN, Gustavo M.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68940L.1-68940L.11, issn 0277-786X, isbn 978-0-8194-7069-0, 1VolConference Paper